Cobalt and Ruthenium Complexes for Vapor Phase Deposition Processes of Metallic Thin Films: Precursor Design, Surface Reaction Chemistry and Thin Film Applications

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  • Atomic layer deposition (ALD) and chemical vapor deposition (CVD) are key techniques in the industrially highly relevant microelectronics sector. The quality of deposited thin films is strongly dependent on the precursors that are employed and the film-forming surface chemistries that they facilitate. Recently, cobalt (Co) and ruthenium (Ru) ALD and CVD processes for the deposition of thinnest metallic layers are garnering significant interest. For these materials, alternative film-forming surface chemistries other than the established ones are rarely studied. Herein, a novel ALD approach for Co is presented in which an intramolecularily stabilized reduction inducing zinc alkyl co-reagent is employed. Likewise a novel CVD route for Ru thin films using a divalent Ru precursor is presented. The resulting Co and Ru thin films are thoroughly characterized in terms of suitability for microelectronics manufacturing. Additionally, alternative Co precursor candidates are systematically synthesized, chemically characterized and their thermal properties evaluated.

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  • 2023


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