Cobalt and Ruthenium Complexes for Vapor Phase Deposition Processes of Metallic Thin Films: Precursor Design, Surface Reaction Chemistry and Thin Film Applications

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  • Atomic layer deposition (ALD) and chemical vapor deposition (CVD) are key techniques in the industrially highly relevant microelectronics sector. The quality of deposited thin films is strongly dependent on the precursors that are employed and the film-forming surface chemistries that they facilitate. Recently, cobalt (Co) and ruthenium (Ru) ALD and CVD processes for the deposition of thinnest metallic layers are garnering significant interest. For these materials, alternative film-forming surface chemistries other than the established ones are rarely studied. Herein, a novel ALD approach for Co is presented in which an intramolecularily stabilized reduction inducing zinc alkyl co-reagent is employed. Likewise a novel CVD route for Ru thin films using a divalent Ru precursor is presented. The resulting Co and Ru thin films are thoroughly characterized in terms of suitability for microelectronics manufacturing. Additionally, alternative Co precursor candidates are systematically synthesized, chemically characterized and their thermal properties evaluated.

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  • Copyright © 2023 the author(s). Theses may be used for non-commercial research, educational, or related academic purposes only. Such uses include personal study, research, scholarship, and teaching. Theses may only be shared by linking to Carleton University Institutional Repository and no part may be used without proper attribution to the author. No part may be used for commercial purposes directly or indirectly via a for-profit platform; no adaptation or derivative works are permitted without consent from the copyright owner.
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  • 2023

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