We report on the fabrication of a chirped, phase mask that was used to create a fiber Bragg grating(FBG)device for the compensation of chromatic dispersion in longhaul optical transmission networks.Electron beamlithography was used to expose the grating onto a resist-coated quartz plate. After etching, this phase mask was used to holographically expose an index grating into the fiber core [K. O. Hill, F. Bilodeau, D. C. Johnson, and J. Albert, Appl. Phys. Lett.62, 1035 (1993)]. The linear increase in the grating period, “chirp,” is only 0.55 nm over the 10 cm grating. This is too small to be defined by computer aided design and a digital deflection system. Instead, the chirp was incorporated by repeatedly rescaling the analog electronics used for field size calibration. Special attention must be paid to minimize any field stitching and exposure artifacts. This was done by using overlapping fields in a “voting” method. As a result, each grating line is exposed by the accumulation of three overlapping exposures at 1/3 dose. This translates any abrupt stitching error into a small but uniform change in the line-to-space ratio of the grating. The phase mask was used with the double-exposure photoprinting technique [K. O. Hill, F. Bilodeau, B. Malo, T. Kitagawa, S. Thériault, D. C. Johnson, J. Albert, and K. Takiguchi, Opt. Lett. 19, 1314 (1994)]: a KrF excimer laser holographically imprints an apodized chirped Bragg grating in a hydrogen loaded SMF-28 optical fiber. Our experiments have demonstrated a spectral delay of −1311 ps/nm with a linearity of +/−10 ps over the 3 dB bandwidth of the resonant wavelength of the FBG. The reflectance, centered on 1550 nm, shows a side-lobe suppression of −25 dB. Fabrication processes and optical characterization will be discussed.
Photobleaching of optical absorption bands in the 5 eV region and the creation of others at higher and lower energy have been examined in the case of ArF (6.4 eV) and KrF (5 eV) excimer laserirradiation of 3GeO2:97SiO2glasses. We report a difference in the transformation process of the neutral oxygen monovacancy and also of the germanium lone pair center (GLPC) into electron trap centers associated with fourfold coordinated Ge ions and Ge-E′ centers when we use one or the other laser. Correlations between absorption bands and electron spin resonance signals were made after different steps of laser irradiation. It was found that the KrF laser generates twice as many Ge-E′ centers as the ArF laser for the same dose of energy delivered. The main reason for this difference is found to be the more efficient bleaching of the GLPC (5.14 eV) by the KrF laser compared to that by the ArF laser.
An earlier version of this paper was prepared for a Symposium, Cultural Policies in Regional Integration, sponsored by the Center for the Study of Western Hemispheric Trade and the Mexican Center of the Institute of Latin American Studies, The University of Texas at Austin, February 2, 1998.