Samples of synthetic fused silica have been implanted at room temperature with silicon ions of energy 1.5 MeV. Fluences ranged from 1011 to 1013 cm−2. Samples were probed using variable‐energy positron annihilation spectroscopy. The Doppler‐broadening S parameter corresponding to the implanted region decreased with increasing fluence and saturated at a fluence of 1013 cm−2. It is shown that the decrease in the S parameter is due to the suppression of positronium (Ps) which is formed in the preimplanted material, due to the competing process of implantation‐induced trapping of positrons. In order to satisfactorily model the positron data it was necessary to account for positron trapping due to defects created by both electronic and nuclear stopping of the implanted ions. Annealing of the 1013 cm−2 sample resulted in measurable recovery of the preimplanted S parameter spectrum at 350 °C and complete recovery to the preimplanted condition at 600 °C. Volume compaction was also observed afterimplantation. Upon annealing, the compaction was seen to decrease by 75%.
Photobleaching of optical absorption bands in the 5 eV region and the creation of others at higher and lower energy have been examined in the case of ArF (6.4 eV) and KrF (5 eV) excimer laserirradiation of 3GeO2:97SiO2glasses. We report a difference in the transformation process of the neutral oxygen monovacancy and also of the germanium lone pair center (GLPC) into electron trap centers associated with fourfold coordinated Ge ions and Ge-E′ centers when we use one or the other laser. Correlations between absorption bands and electron spin resonance signals were made after different steps of laser irradiation. It was found that the KrF laser generates twice as many Ge-E′ centers as the ArF laser for the same dose of energy delivered. The main reason for this difference is found to be the more efficient bleaching of the GLPC (5.14 eV) by the KrF laser compared to that by the ArF laser.